Project Details

Memristive systems have emerged as key candidates for next-generation neuromorphic computing, primarily due to their ability to emulate synaptic plasticity through resistive switching phenomena. While conventional thin-film memristors have been extensively investigated, networks of nanoparticles are increasingly being recognized as a versatile and potentially superior platform for achieving memristive behavior. This GACR project focuses on the development of novel nanofluids engineered to exhibit resistive switching functionalities, thereby opening pathways toward fluid-based, three-dimensional neuromorphic architectures. These nanofluids will be synthesized by introducing magnetron-sputtered metallic nanoparticles, produced via a gas aggregation cluster source, into carefully selected host liquids. The resulting composite systems will enable a systematic study of resistive switching mechanisms, where both nanoparticle attributes (size, composition, surface states) and host liquid properties (viscosity, dielectric response, chemical reactivity) will play crucial roles. The research will seek to uncover the fundamental principles underlying conductive channel formation and rupture within nanofluids. To achieve this, we will employ an advanced set of characterization methods, such as in situ transmission electron microscopy combined with electrical measurements that have not previously been applied to such systems. These techniques will provide real-time insights into dynamic structural and electronic changes within the nanofluids under applied electrical stimuli. Ultimately, this work will not only expand the understanding of resistive switching phenomena in unconventional environments but also lay the foundation for innovative, adaptive, and reconfigurable neuromorphic systems based on nanofluids.